1 中国科学院半导体研究所光电子器件国家工程研究中心，北京 100083
2 中国科学院大学材料科学与光电技术学院，北京 100049
3 广东华快光子科技有限公司，广东 中山 528436
4 北京大学信息科学技术学院，北京 100871
应用于掺镱(Yb)光纤激光器的半导体可饱和吸收镜(SESAM)需要具有较高的调制深度，即将较厚的砷化铟镓(InGaAs)材料作为吸收层。然而，InGaAs材料与砷化镓(GaAs)衬底之间的大失配，导致过厚的InGaAs材料质量极易恶化，影响锁模效果。因此，优化的外延结构设计和高质量的外延材料成为研制高性能SESAM的关键。本文设计了吸收层InGaAs材料总厚度分别为150 nm和300 nm的两种应变补偿多量子阱(MQW)结构的SESAM，利用金属有机化合物气相沉积(MOCVD)方法进行外延材料生长，采用光致发光光谱仪、高分辨X射线衍射仪和分光光度计对外延材料特性进行表征，优化外延材料生长参数。将研制的两种SESAM应用到线型腔掺Yb光纤激光器中，实现稳定锁模的泵浦功率分别为130 mW和120 mW，输出激光脉宽分别为18.3 ps和9.6 ps。实验结果表明，吸收层InGaAs材料厚度为300 nm的SESAM更容易实现稳定锁模并获得脉宽较窄的激光脉冲输出。
激光器 超快激光器 半导体可饱和吸收镜 金属有机化合物气相沉积 应变补偿多量子阱结构 中国激光
2022, 49(11): 1101002
Author Affiliations
Abstract
1 State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China
2 National Research Center for Optoelectronic Engineering, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100871, China
3 Ultrafast Laser Laboratory, Key Laboratory of Opto-electronic Information Technical Science of Ministry of Education, School of Precision Instrument and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China
4 Huakuai Photonic Technologies Inc., Zhongshan 528400, China
We demonstrate a strain compensated long lifetime semiconductor saturable absorber mirror (SESAM) with a high modulation depth for fiber lasers. The SESAM was measured to have a damage threshold of 9.5 mJ/cm2, a modulation depth of 11.5%, a saturation fluence of 39.3 μJ/cm2, and an inversed saturable absorption coefficient of 630 mJ/cm2. The SESAM has been applied to a linear cavity mode-locked Yb-doped fiber laser, which has been working for more than a year without damage of the SESAM.
140.4050 Mode-locked lasers 140.3510 Lasers, fiber 160.6000 Semiconductor materials Chinese Optics Letters
2019, 17(7): 071404
